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Agilent HSCH-9161 Zero Bias Beamlead Detector Diode
Data Sheet
231 (9.1)
Features * Low junction capacitance * Lower temperature coefficient than silicon * Durable construction -- typical 6 gram beamlead strength * Operation to 110 GHz
Description Agilent's HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode (MBID) process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It can be mounted in ceramic microstrip (MIC), finline and coplanar waveguide circuits.
Note 1: The diode structure and process are covered by U.S. Patent No. 4,839,709 issued to Mark Zurakowski on June 13, 1989, and assigned to Agilent.
250 (9.8)
250 (9.8)
231 (9.1)
120 (4.7)
ALL DIMENSIONS IN MICRONS.
Small Signal Linear Model
0.011 pF
0.3 nH 50
0.035 pF
Rv = Rj + Rs
Rj
Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, "The Handling and Bonding of Beam Lead Devices Made Easy," or Application Note 992, "Beam Lead Attachment Methods," or Application Note 993, "Beam Lead Device Bonding to Soft Substrates."
Applications At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields virtually flat detection sensitivity from 10 to 30 GHz with good performance from 30 to 110 GHz. In a wideband matched detector, in which a shunt 50 resistor is used in front of the diode, voltage sensitivity () is calculated to be 1 mV/W. Where a high-Q reactive impedance matching network is substituted for the shunt 50 resistor, values of approaching 25 mV/W can be expected. In applications below 10 GHz where DC bias is not available and where temperature sensitivity is a design consideration, the HSCH-9161 offers superior stability when compared to silicon zero bias Schottky diodes. Bonding and Handling For more detailed information, see Agilent Application Note 999, "GaAs MMIC Assembly and Handling Guidelines."
HSCH-9161 Absolute Maximum Ratings, TA = 25C
Symbol
Top Tstg PB
Parameters/Conditions
Operating Temp. Range Storage Temp. Range Burnout Power
Units
C C dBm
Min.
-65 -65
Typ.
Max.
175 200
SPICE Parameters Because of the high leakage of this diode under reverse bias, it must be modelled as an anti-parallel pair.
20
HSCH-9161
DC Specifications/Physical Properties, TA = 25C
Symbol
Cj RV
D1
D2
Parameters and Test Conditions
Junction Capacitance Test Conditions: f = 1 GHz Video Resistance Test Conditions: Zero Bias Voltage Sensitivity Test Conditions: Zero Bias, 10 GHz, shunt 50 input matching resistor Beamlead Strength
Units
pF k mV/W
Min.
Typ.
.035
Max.
2.5 0.5
7.5
D1 represents the characteristic of the HSCH-9161 under forward bias and D2 (in the forward direction) gives the V-I curve of the HSCH-9161 under reverse bias. Parameter Units D1 D2
10 0.030 1.42 10E-12 84 x 10E-6 40.0 10 0.26 2 0.5
--
grams
3
BV CJO
V pF eV A A
10 0.030 1.42 10E-12 12 x 10E-6 1.2
HSCH-9161 Typical Performance
100 16 14
FORWARD CURRENT (mA)
50
EG IBV IS N
10 Maximum 8 6 4 2 Typical
10
VIDEO RESISTANCE (K)
12
1
RS PB (VJ) PT (XTI) M
V
50 0.26 2 0.5
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
0
0
10
20
30
40
50
60
70
80
FORWARD VOLTAGE (V)
TEMPERATURE (C)
Figure 1. Forward Current vs. Forward Voltage.
1.0
50 100 K
Figure 2. Typical Variation of Video Resistance vs. Temperature.
0.8
GAMMA (mV/W)
0.6
0.4
0.2 Frequency = 10 GHz 0 0 10 20 30 40 50 60 70 80
TEMPERATURE (C)
Figure 3. Calculated Variation of Voltage Sensitivity vs. Temperature.
For product information and a complete list of Agilent contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com Data subject to change. Copyright (c) 2002 Agilent Technologies, Inc. Obsoletes 5988-5907EN March 29, 2002 5988-6209EN

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